Journal of Display Technology

Optimization of 2-Stack WOLED Structure With Consideration on Color Gamut and Power Consumption

Hong Seok Choi — Tue, 01 Dec 2009 00:00:00 EST

Hong Seok Choi, Sunghoon Pieh, Chang Je Sung, Hwa Kung Kim, Myung Seop Kim, Chang-Wook Han, Yoon Heung Tak
We fabricated 2-stack white organic light-emitting diode (WOLED) structure with luminance efficiency of 27.4 cd/A and color point of (0.32, 0.29) where one unit device emitted blue color and the other emitted red and green ... [J. Display Technol. 5, 546-551 (2009)]

Dual-Plate OLED Display (DOD) Embedded With White OLED

Chang-Wook Han — Tue, 01 Dec 2009 00:00:00 EST

Chang-Wook Han, Hwa Kyung Kim, Hee Suk Pang, Sung-Hoon Pieh, Chang Je Sung, Hong Seok Choi, Woo-Chan Kim, Myung-Seop Kim, Yoon-Heung Tak
White organic light-emitting diode (WOLED) with color filter adopting dual-plate OLED display (DOD) structure is proposed. In order to prevent outgassing from color filter and overcoat, the SiN_x passivation film was deposited on the overcoat film. ... [J. Display Technol. 5, 541-545 (2009)]

Materials, Devices, and Circuits of Transparent Amorphous-Oxide Semiconductor

Hideya Kumomi — Tue, 01 Dec 2009 00:00:00 EST

Hideya Kumomi, Seiichiro Yaginuma, Hideyuki Omura, Amita Goyal, Ayumu Sato, Masaya Watanabe, Mikio Shimada, Nobuyuki Kaji, Kenji Takahashi, Masato Ofuji, Tomohiro Watanabe, Naho Itagaki, Hisae Shimizu, Katsumi Abe, Yoshinori Tateishi, Hisato Yabuta, Tatsuya Iwasaki, Ryo Hayashi, Toshiaki Aiba, Masafumi Sano
This paper presents the following recent investigations of transparent amorphous-oxide semiconductors (TAOS) from materials to devices and circuits. 1) Composition of metals in TAOS are widely explored with the aim of ... [J. Display Technol. 5, 531-540 (2009)]

Solution-Processed Zinc Oxide Transistors for Low-Cost Electronics Applications

Vivek Subramanian — Tue, 01 Dec 2009 00:00:00 EST

Vivek Subramanian, Teymur Bakhishev, David Redinger, Steven K. Volkman
Transparent conductive oxides are promising candidates for realization of transparent electronics for display applications. The use of solution-processing techniques allows for a dramatic reduction in cost per unit area of ... [J. Display Technol. 5, 525-530 (2009)]

Inkjet-Printed High Mobility Transparent–Oxide Semiconductors

Seung-Yeol Han — Tue, 01 Dec 2009 00:00:00 EST

Seung-Yeol Han, Doo-Hyoung Lee, Gregory S. Herman, Chih-Hung Chang
In this paper, we report a general and low-cost process to fabricate high mobility metal–oxide semiconductors that is suitable for thin-film electronics. This process use simple metal halide precursors dissolved in an organic solvent and is capable of forming uniform and ... [J. Display Technol. 5, 520-524 (2009)]

Self-Aligned Top-Gate Coplanar In-Ga-Zn-O Thin-Film Transistors

Cheng-Han Wu — Tue, 01 Dec 2009 00:00:00 EST

Cheng-Han Wu, Hsing-Hung Hsieh, Chih-Wei Chien, Chung-Chih Wu
Self-aligned techniques are often used in conventional CMOS and Si-based thin-film transistors (TFTs) technologies due to various merits. In this paper, we report self-aligned coplanar top-gate InGaZnO TFTs using PECVD a-SiN_x:H patterned to have ... [J. Display Technol. 5, 515-519 (2009)]

The Influence of Channel Compositions on the Electrical Properties of Solution-Processed Indium-Zinc Oxide Thin-Film Transistors

Chang-Ken Chen — Tue, 01 Dec 2009 00:00:00 EST

Chang-Ken Chen, Hsing-Hung Hsieh, Jing-Jong Shyue, Chung-Chih Wu
Electrical properties of indium-zinc oxide (IZO) thin-film-transistors (TFTs) based on solution processes with various channel compositions are investigated in this paper. Amorphous IZO thin films with high transparency and ... [J. Display Technol. 5, 509-514 (2009)]

Transparent Electronics for See-Through AMOLED Displays

Thomas Riedl — Tue, 01 Dec 2009 00:00:00 EST

Thomas Riedl, Patrick Görrn, Wolfgang Kowalsky
Transparent thin-film-transistors (TFTs) with a channel semiconductor based on the zinc–tin–oxide (ZTO) system are presented. Specifically, the technological and material aspects of the plasma-assisted pulsed ... [J. Display Technol. 5, 501-508 (2009)]

MOSFET-Like Behavior of a-InGaZnO Thin-Film Transistors With Plasma-Exposed Source–Drain Bulk Region

Jaewook Jeong — Tue, 01 Dec 2009 00:00:00 EST

Jaewook Jeong, Yongtaek Hong, Jae Kyeong Jeong, Jin-Seong Park, Yeon-Gon Mo
In this paper, we analyzed electrical characteristics of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) with plasma-exposed source–drain (S/D) bulk region. The parasitic resistance and ... [J. Display Technol. 5, 495-500 (2009)]

Oxide Electronics by Spatial Atomic Layer Deposition

David H. Levy — Tue, 01 Dec 2009 00:00:00 EST

David H. Levy, Shelby F. Nelson, Diane Freeman
We report on zinc oxide (ZnO)-based devices produced by a fast, open-air atomic layer deposition (ALD) process relying upon the spatial isolation of reactive gases. At deposition rates of greater than 100 Å per minute, ZnO-based thin-film transistors by spatial atomic layer ... [J. Display Technol. 5, 484-494 (2009)]

Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping*

Toshio Kamiya — Tue, 01 Dec 2009 00:00:00 EST

Toshio Kamiya, Kenji Nomura, Hideo Hosono
Amorphous oxide semiconductors (AOSs) are expected as new channel materials in thin-film transistors (TFTs) for large-area and/or flexible flat-panel displays and other giant-microelectronics devices. So far, many prototype ... [J. Display Technol. 5, 468-483 (2009)]

Electronic Structures Above Mobility Edges in Crystalline and Amorphous In-Ga-Zn-O: Percolation Conduction Examined by Analytical Model

Toshio Kamiya — Tue, 01 Dec 2009 00:00:00 EST

Toshio Kamiya, Kenji Nomura, Hideo Hosono
Electronic structures and carrier transport mechanisms in disordered oxide semiconductors, crystalline InGaO_3(ZnO)_m (m = 1,5) (c-IGZO)and amorphous InGaZnO_4 (a-IGZO), are examined based on a percolation conduction model. Donor levels (E_d) and ... [J. Display Technol. 5, 462-467 (2009)]

Electrical Instability of RF Sputter Amorphous In-Ga-Zn-O Thin-Film Transistors

Tze-Ching Fung — Tue, 01 Dec 2009 00:00:00 EST

Tze-Ching Fung, Katsumi Abe, Hideya Kumomi, Jerzy Kanicki
Bias-temperature-stress (BTS) induced electrical instability of the RF sputter amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) was investigated. Both positive and negative BTS were applied and found to primarily ... [J. Display Technol. 5, 452-461 (2009)]

Intrinsic Polarization of Self-Assembled Guanosine Supramolecules in GaN-Based Metal–Semiconductor–Metal Nano-Structures

Jianyou Li — Tue, 01 Dec 2009 00:00:00 EST

Jianyou Li, Abhijit Sarkar, Hadis Morkoc, Arup Neogi
The transport properties of self-assembled guanosine supramolecules (SAGS) confined within nanoscale metal electrodes on transparent GaN semiconductor substrates have been studied. The modified guanosine molecules have been ... [J. Display Technol. 5, 446-451 (2009)]

An Amorphous Indium–Gallium–Zinc–Oxide Active Matrix Electroluminescent Pixel

Patrick Wellenius — Tue, 01 Dec 2009 00:00:00 EST

Patrick Wellenius, Arun Suresh, Haojun Luo, Leda M. Lunardi, John F. Muth
In this study, an active matrix pixel was fabricated and characterized using indium gallium zinc oxide (IGZO) thin-film transistors and a novel electroluminescent (EL) Eu:IGZO thin-film phosphor. The results show that even large and unoptimized IGZO devices are capable of ... [J. Display Technol. 5, 438-445 (2009)]

Modeling Multiple Rare Earth-Doped System for White Light Generation

Chun Jiang Wenbin Xu — Tue, 01 Dec 2009 00:00:00 EST

Chun Jiang, Wenbin Xu
A numerical model of Tm^3+-Tb^3+-Eu^3+-co-doped system for white light generation is presented in this paper. The energy level, electron transition process and rate and power propagating equations are proposed to calculate fluorescence intensity of the system ... [J. Display Technol. 5, 431-437 (2009)]